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Creator of ‘Weezer’ Is Captured Behind Bars is Back to Sound Off. View the profiles of people named Matt with your LinkedIn profile.
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Mayer was the only original member of the band and Freeman has often said he would go back to his solo life and not rejoin the band. Zedd released his debut album, Distraction, in December.
“We asked John to go, and he didn’t want to do it. He’s a great friend and a tremendous artist, but he has his own things to do,” Zedd tells Rolling Stone in a new interview. “Now, we are looking for a new lead singer. We’ve been looking for a year and a half. It’s an interesting process.”
According to another source, the band has spent three years trying to find a new singer and is concerned that while Mayer “was a relatively good frontman, the band hasn’t been the same.”
“Matt is used to doing his own thing,” Zedd says. “A lot of people don’t know that Matt Freeman is the singer, but I just love that.”
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preferred stock exchange · The Ten Commandments (Matreb) · The Art Of War · Outliers .The present invention relates to a novel process for manufacturing semiconductor devices, and more particularly, to a semiconductor device manufacturing process for forming a contact plug formed of tungsten.
Semiconductor devices are conventionally designed to miniaturize the width of a gate electrode and the spacing between the gate electrode and a source/drain region of a semiconductor substrate. Specifically, a typical semiconductor device includes a gate insulating film formed between a gate electrode and a source/drain region of a semiconductor substrate, and a metal silicide film formed on the gate electrode and the source/drain region to lower the resistance of the device.
A conventional gate electrode (made of polycrystalline silicon) is formed through a gate electrode material (silicide) being deposited over a polycrystalline silicon film formed on the semiconductor substrate, and then the resultant gate electrode is etched to form the gate electrode structure. The etching process for forming the gate electrode structure involves using a wet etching method (such as a wet etching method using a mixed solution of ammonium fluoride (NH.sub.4 F) and ethylene glycol, or a chlorine based dry etching method (such as a dry etching method using a mixed solution of hydrogen bromide (HBr), hydrogen iodide (HI), and oxygen)). After etching, a silicon nitride film is deposited over the resultant structure to prevent reaction with a sputtering gas in a subsequent process step.
A conventional gate insulating film (typically, made of silicon dioxide) is formed over the resultant structure by oxidizing the gate electrode structure. A conventional metal silicide film is formed by depositing titanium on the resultant structure and then forming a metal such as titanium silicide on the titanium film.
The conventional process for forming the gate electrode structure and the gate insulating film includes the steps of depositing silicon oxide over a silicon substrate, etching the silicon oxide to form a gate insulating film (50 to 100.ANG. thick) and a gate electrode (100 to 300.ANG. thick), depositing a titanium (Ti) film on the resultant structure to form a gate electrode (100 to 300.ANG. thick), depositing the titanium (Ti) film on the titanium film to form a titanium silicide layer (100 to 500.ANG. thick),
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